期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4864015
关键词
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资金
- National Basic Research Program of China [2012CB933103]
- Ministry of Science and Technology China
- NSFC [11004201, 51331006]
- IMR SYNL-Young Merit Scholars
The strain-induced magnetism is observed in single-layer MoS2 with atomic single vacancies from density functional calculations. Calculated magnetic moment is no less than 2 mu(B) per vacancy defect. The strain-induced band gap closure is concurrent with the occurrence of the magnetism. Possible physical mechanism of the emergence of strain-induced magnetism is illustrated. We also demonstrate the possibility to test the predicted magnetism in experiment. Our study may provide an opportunity for the design of new type of memory-switching or logic devices by using earth-rich nonmagnetic materials MoS2. (C) 2014 AIP Publishing LLC.
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