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K. Nakamura et al.
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R. Takabe et al.
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Masakazu Baba et al.
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Takanobu Saito et al.
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Dai Tsukada et al.
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Michitaka. Kobayashi et al.
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D. B. Migas et al.
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T. Suemasu et al.
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K. Morita et al.
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Band diagrams of BaSi2/Si structure by Kelvin probe and current-voltage characteristics
Takashi Suemasu et al.
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Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy
Y Inomata et al.
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Y Inomata et al.
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BE Umirzakov et al.
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Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations
T Nakamura et al.
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