期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 22, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4882117
关键词
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资金
- Core Research for Evolutional Science and Technology, Japan Science and Technology Agency (JST-CREST)
Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V-D, was 0.53 V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73 eV calculated from the thermoionic emission theory; the V-D was about 1.5 V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si. (C) 2014 AIP Publishing LLC.
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