期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4893315
关键词
-
资金
- U.S. Department of Energy [DE-EE0006334]
Low open circuit voltage (V-OC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)(4) (CZTSSe) solar cells. We report high light intensity and low temperature Suns-V-OC measurement in high performance CZTSSe devices. The Suns-V-OC curves exhibit bending at high light intensity, which points to several prospective V-OC limiting mechanisms that could impact the V-OC, even at 1 sun for lower performing samples. These V-OC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-V-OC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower J(SC)-V-OC diode ideality factor. (c) 2014 AIP Publishing LLC.
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