4.6 Article

Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well

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JOURNAL OF APPLIED PHYSICS
卷 116, 期 20, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4902857

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资金

  1. CNPq
  2. CAPES
  3. FAPESP [2011/20985-6, 2011/50975-2, 2010/11393-5]
  4. Ministry of Education and Science of Russian Federation [8.1054.2014/K]
  5. Russian Foundation for Basic Research [13-07-00982a, 13-02-97140-reg]

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We investigated the effects of nearby Mn ions on the confined states of a InGaAs/GaAs quantum well through circularly polarized and magneto-optical measurements. The addition of a Mn delta-doping layer at the barrier close to the well gives rise to surprisingly narrow absorption peaks in the photoluminescence excitation spectra. The peaks become increasingly stronger for decreasing spacer-layer thicknesses between the quantum well and the Mn layer. Most of the peaks were identified based on self-consistent calculations; however, we observed additional peaks that cannot be identified with quantum well transitions, which origin we attribute to an enhanced exciton-phonon coupling. Finally, we discuss possible effects related to the exciton magneto-polaron complex in the reinforcement of the photoluminescence excitation peaks. (C) 2014 AIP Publishing LLC.

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