期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 19, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4902010
关键词
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资金
- EU ERC-AG Program (Project 3-TOP)
- Deutsche Forschungsgemeinschaft [FOR1162]
Epitaxial films of the ternary topological insulator Bi2Te2Se were grown on Si(111) substrates and investigated for their surface electronic properties and morphology. We employ a Se-capping procedure allowing for the preparation of clean films in the surface-analysis experimental setups. Using angle-resolved photoelectron spectroscopy, we determine the dispersion of the topological surface state. With time after surface preparation, the spectroscopic features in the surface electronic structure exhibit significant temperature-dependent shifts to higher binding energies. Scanning tunneling microscopy images show terraces with typical step edge separations of 50 nm-150 nm. X-ray photoelectron spectroscopy indicates an increased Se concentration at the surface. (C) 2014 AIP Publishing LLC.
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