Broadband infrared emission of Pr3+-doped BaGd2(MoO4)4 for optical amplifier

Contrary to most Pr3+-doped materials, Pr3+-doped BaGd2(MoO4)(4) crystals do not generate the 1320 nm photoluminescence, which is used as an amplifier for O-band optical communications. However, it is found to generate a broad emission band in the wavelength region of 1400-1550 nm with full-width at half-maximum of 130nm. Pr3+-doped BaGd2(MoO4)(4) with broadband near-infrared emission is expected to be useful as an amplifier material in the E-and S-band optical communication systems. Disappearance of the 1320 nm emission in BaGd2(MoO4)(4) is explained by the energy gap law with high maximum phonon energy (944 cm(-1)) of BaGd2(MoO4)(4). The 1400-1550 nm emission has the maximum intensity at 1 mol.% Pr3+ concentration. The concentration quenching is understood by cross-relaxation process. (C) 2014 AIP Publishing LLC.