期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4895986
关键词
-
资金
- CARIPLO Foundation (prj. SOQQUADRO) [2011-0362]
We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano-disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E-A = 1.31 +/- 0.15 eV, a diffusivity prefactor of D-0 = 0.53(x2.1 +/- 1) cm(2) s(-1) that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad-atoms on III-V crystal surfaces and the fabrication of designable nanostructures. (C) 2014 AIP Publishing LLC.
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