期刊
JOURNAL OF APPLIED PHYSICS
卷 116, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4896402
关键词
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资金
- National Natural Science Foundation of China (NSFC) [11032010]
- NSFC [61274107]
- 973 Program [2012CB326404]
- Hunan Provincial NSFC [13JJ2023]
We present the effects of an amorphous ZrO2 layer on the TiO2-based bipolar resistive switching memory device where the ZrO2 layer plays an important role as a supplementary reservoir of oxygen vacancies. Compared with Pt/TiO2/Pt monolayer device, a remarkably improved uniformity of switching parameters such as switching voltages and resistances in high/low states is demonstrated in the Pt/ZrO2/TiO2/Pt system. The resistive switching mechanism of memory devices incorporating the ZrO2/TiO2 bilayer structure can be attributed to multiple conducting filaments through the occurrence of redox reactions at the ZrO2/TiO2 surface. (C) 2014 AIP Publishing LLC.
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