期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4863800
关键词
-
资金
- National Research Foundation (NRF) Singapore under the Competitive Research Program (CRP) Tailoring Oxide Electronics by Atomic Control [NRF2008NRF-CRP002-024]
- Singapore National Research Foundation under CRP Award [NRF-CRP10-2012-02]
We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell, the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures. (C) 2014 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据