期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4871289
关键词
-
资金
- Solid State Solar Thermal Energy Conversion Center, an Energy Frontier Research Center - U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-FG02-09ER46577]
- National Science Foundation [DMR-08-19762]
The properties of InAsxP1-x compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (epsilon/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10(6)/cm(2)) and tilt of the epi-layer (>0.1 degrees). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 x 10(5) cm(-2) for films graded from the InP lattice constant to InAs0.15P0.85. A model for a two-energy level dislocation nucleation system is proposed based on our results. (C) 2014 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据