期刊
JOURNAL OF APPLIED PHYSICS
卷 115, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4867047
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资金
- U.S. Government under DOE [DE-AC07-05ID14517]
- U.S. Government under Energy Frontier Research Center (Office of Science, Office of Basic Energy Science) [FWP 1356]
A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance. (C) 2014 AIP Publishing LLC.
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