期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4823854
关键词
-
资金
- Spanish MINECO [TEC2010-16126/BES-2008-007974]
- Generalitat de Catalunya [2009SGR-783]
- Beatriu Pinos Program [BP-A-00135]
We investigate the role of grains and grain boundaries (GBs) in the electron transport through poly-crystalline HfO2 by means of conductive atomic force microscopy (CAFM) measurements and trap-assisted tunneling simulations. CAFM experiments demonstrate that the leakage current through a thin dielectric film preferentially flows via the GBs. The current I-V characteristics measured on both types of sites, grains, and GBs are successfully simulated by utilizing the multiphonon trap-assisted tunneling model, which accounts for the inelastic charge transport via the electron traps. The extracted density of electrically active traps, whose energy parameters match those of the positively charged oxygen vacancies in hafnia, is similar to 3 x 10(19) cm(-3) at the grains, whereas a much higher value of (0.9 divided by 2.1) x 10(21) cm(-3) is required to reproduce the leakage current through the GBs. (C) 2013 AIP Publishing LLC.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据