期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4820454
关键词
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资金
- U.S. Army-ARDEC [W15QKN-07-P-0092]
- U.S. Army Research Office [W911NF-12-1-0196]
- Natural Sciences and Engineering Research Council of Canada
- National Science Foundation [ECCS-1102050, ECS-0335765]
- Department of Energy (DOE) under NSF CA [EEC-1041895]
- MIT-KFUPM Center for Clean Water and Energy
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1102050] Funding Source: National Science Foundation
We present a methodology for estimating the efficiency potential for candidate impurity-band photovoltaic materials from empirical measurements. This methodology employs both Fourier transform infrared spectroscopy and low-temperature photoconductivity to calculate a performance figure of merit and to determine both the position and bandwidth of the impurity band. We evaluate a candidate impurity-band material, silicon hyperdoped with sulfur; we find that the figure of merit is more than one order of magnitude too low for photovoltaic devices that exceed the thermodynamic efficiency limit for single band gap materials. (C) 2013 AIP Publishing LLC.
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