期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 18, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4829924
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资金
- NASA URC grant [NNX08BA48A]
- NSF EPSCoR grant [EPS1002410]
- Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]
- United States Department of Energy [DE-FG02-07ER46377]
- Office of Naval Research [N00014-10-1-0581]
- NCN [UMO-2011/03/B/ST5/03256]
- NASA [NNX08BA48A, 90641] Funding Source: Federal RePORTER
The temperature dependence of the Seebeck coefficient, the electrical and thermal conductivities of individual beta-silicon carbide nanowires produced by combustion in a calorimetric bomb were studied using a suspended micro-resistance thermometry device that allows four-point probe measurements to be conducted on each nanowire. Additionally, crystal structure and growth direction for each measured nanowire was directly obtained by transmission electron microscopy analysis. The Fermi level, the carrier concentration, and mobility of each nanostructure were determined using a combination of Seebeck coefficient and electrical conductivity measurements, energy band structure and transport theory calculations. The temperature dependence of the thermal and electrical conductivities of the nanowires was explained in terms of contributions from boundary, impurity, and defect scattering. (C) 2013 AIP Publishing LLC.
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