期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4817254
关键词
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资金
- MICINN within the program Juan de la Cierva [JCI-2011-10402, JCI-2011-11471]
- PICATA predoctoral fellowship of the Moncloa Campus of International Excellence (UCM-UPM)
- projects NUMANCIA II
- Regional Government of Comunidad de Madrid [S-2009/ENE-1477]
- Universidad Complutense de Madrid [grant GR35/10-A]
In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical Mott limit has been surpassed after the laser process and transmission electron microscopy images show a good lattice reconstruction. Optical characterization shows strong sub-band gap absorption related to the high Ti concentration. Photoconductivity measurements show that Ti supersaturated Si presents spectral response orders of magnitude higher than unimplanted Si at energies below the band gap. We conclude that the observed below band gap photoconductivity cannot be attributed to structural defects produced by the fabrication processes and suggest that both absorption coefficient of the new material and lifetime of photoexcited carriers have been enhanced due to the presence of a high Ti concentration. This remarkable result proves that Ti supersaturated Si is a promising material for both infrared detectors and high efficiency photovoltaic devices. (C) 2013 AIP Publishing LLC.
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