相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。High Si and Ge n-type doping of GaN doping - Limits and impact on stress
S. Fritze et al.
APPLIED PHYSICS LETTERS (2012)
Phonon plasmon interaction in ternary group-III-nitrides
Ronny Kirste et al.
APPLIED PHYSICS LETTERS (2012)
Optical signature of Mg-doped GaN: Transfer processes
G. Callsen et al.
PHYSICAL REVIEW B (2012)
Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements
G. Callsen et al.
APPLIED PHYSICS LETTERS (2011)
Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Ronny Kirste et al.
JOURNAL OF APPLIED PHYSICS (2011)
Carbon impurities and the yellow luminescence in GaN
J. L. Lyons et al.
APPLIED PHYSICS LETTERS (2010)
Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition
S. Mita et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Evidence for Two Mg Related Acceptors in GaN
B. Monemar et al.
PHYSICAL REVIEW LETTERS (2009)
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
S. Mita et al.
JOURNAL OF APPLIED PHYSICS (2008)
Luminescence properties of defects in GaN -: art. no. 061301
MA Reshchikov et al.
JOURNAL OF APPLIED PHYSICS (2005)
First-principles calculations for defects and impurities: Applications to III-nitrides
CG Van de Walle et al.
JOURNAL OF APPLIED PHYSICS (2004)
Photoluminescence and Raman spectroscopy of Mg-doped GaN; as grown, hydrogen implanted and annealed
HW Kunert et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2003)
Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN
CD Latham et al.
PHYSICAL REVIEW B (2003)
Hole conductivity and compensation in epitaxial GaN:Mg layers
U Kaufmann et al.
PHYSICAL REVIEW B (2000)