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Z. Batool et al.
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A. J. Ptak et al.
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C. A. Broderick et al.
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The effect of Bi composition to the optical quality of GaAs1-xBix
A. R. Mohmad et al.
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Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1-x alloys
R. Kudrawiec et al.
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J. P. Petropoulos et al.
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Clustering effects in Ga(AsBi)
Sebastian Imhof et al.
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Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate
Said Nacer et al.
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Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
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Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi et al.
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G. Feng et al.
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Giant spin-orbit bowing in GaAs1-xBix
B. Fluegel et al.
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S Tixier et al.
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New III-V semiconductor InGaAsBi alloy grown by molecular beam epitaxy
G Feng et al.
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Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors:: Effects of p1/2 local orbitals and chemical trends -: art. no. 035212
P Carrier et al.
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Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with λ > 2.5 μm
L Shterengas et al.
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G Lin et al.
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Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
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