InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3-0.8 eV (1.5-4 mu m) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (Delta(SO)) is large and controllable and can, for example, be made larger than the band gap (E-g) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices. (C) 2013 AIP Publishing LLC.