期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4817174
关键词
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资金
- Nanoelectronics Research Initiative
- VMEC
- US Department of Energy [DE-FG02-98ER45680, DE-AC02-98CH10886]
- U.S. Department of Energy (DOE) [DE-FG02-98ER45680] Funding Source: U.S. Department of Energy (DOE)
We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O-2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal-semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST. (C) 2013 AIP Publishing LLC.
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