期刊
JOURNAL OF APPLIED PHYSICS
卷 114, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4821264
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资金
- Flemish Science Foundation (FWO-Vl)
- European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE within the project CONGRAN
- Methusalem Foundation of the Flemish government
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from ;zero magnetic field. (C) 2013 AIP Publishing LLC.
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