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Dong-gun Lee et al.
APPLIED PHYSICS LETTERS (2012)
Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE
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JOURNAL OF LUMINESCENCE (2012)
Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center
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APPLIED PHYSICS LETTERS (2011)
Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy
Yasufumi Takagi et al.
APPLIED PHYSICS LETTERS (2011)
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
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JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Eu-Doped GaN Films Grown by Phase Shift Epitaxy
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APPLIED PHYSICS EXPRESS (2010)
1.54 μm emitters based on erbium doped InGaN p-i-n junctions
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APPLIED PHYSICS LETTERS (2010)
Effect of growth conditions on Eu3+ luminescence in GaN
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JOURNAL OF CRYSTAL GROWTH (2010)
Luminescence and energy-transfer mechanisms in Eu3+-doped GaN epitaxial films
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PHYSICAL REVIEW B (2010)
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APPLIED PHYSICS B-LASERS AND OPTICS (2009)
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APPLIED PHYSICS EXPRESS (2009)
Effect of Si codoping on Eu3+ luminescence in GaN
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JOURNAL OF APPLIED PHYSICS (2009)
Spectroscopic and energy transfer studies of Eu3+ centers in GaN
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JOURNAL OF APPLIED PHYSICS (2007)
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OPTICAL MATERIALS (2006)
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OPTICAL MATERIALS (2006)
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APPLIED PHYSICS LETTERS (2005)
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APPLIED PHYSICS LETTERS (2003)
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APPLIED PHYSICS LETTERS (2003)
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APPLIED PHYSICS LETTERS (2003)
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