Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

In this paper, we have investigated the room temperature dislocation-related photoluminescence of electron irradiated silicon. It is found that high temperature annealing can enhance the D1 line emission measured at room temperature. The abnormal peak shift of D1 line on the dependence of temperatures reveals the reconstruction of D1 luminescence center. It is suggested that the high temperature annealing could cause the transformation of the dislocation-point defect structure, so that the D1 luminescence is enhanced and stabilized. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776779]