期刊
JOURNAL OF APPLIED PHYSICS
卷 113, 期 13, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4798963
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资金
- Army Research Office through MURI grant [W911-NF-09-1-0398]
- Department of Energy [DE-FG02-98ER45680]
- U.S. Department of Energy [DE-AC02-05CH11231]
Stoichiometric CaVO3 (CVO) thin films of various thicknesses were grown on single crystal SrTiO3 (STO) (001) substrates using a pulsed electron-beam deposition technique. The CVO films were capped with a 2.5 nm STO layer. We observed a temperature driven metal-insulator transition (MIT) in CVO films with thicknesses below 4 nm that was not observed in either thick CVO films or STO films. The emergence of this MIT can be attributed to the reduction in effective bandwidth due to a crossover from a three-dimensional metal to a two-dimensional insulator. The insulating phase was only induced with a drive current below 0.1 mu A. X-ray absorption measurements indicated different electronic structures for thick and very thin films of CVO. Compared with the thick film (similar to 60 nm), thin films of CVO (2-4 nm) were more two-dimensional with the V charge state closer to V4+. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798963]
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