期刊
JOURNAL OF APPLIED PHYSICS
卷 111, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3695998
关键词
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资金
- Office of Naval Research (ONR) [N000 14-10-1-0489]
- National Science Foundation (NSF) [DMR-0548182, DMR1006725]
- U.S. Department of Energy (DOE) [DE-SC0001878]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1006725] Funding Source: National Science Foundation
An epitaxial layer of SrTiO3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiOx interlayer can be formed which alters the strain state of SrTiO3. We report a study of strain relaxation in SrTiO3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO3 on Si (001). Understanding the process of strain relaxation of SrTiO3 on silicon will be useful for controlling the SrTiO3 lattice constant for lattice matching with functional oxide overlayers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695998]
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