4.6 Article

Oxidation stress evolution and relaxation of oxide film/metal substrate system

期刊

JOURNAL OF APPLIED PHYSICS
卷 112, 期 2, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.4736934

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资金

  1. National Natural Science Foundation of China [90816007, 91116006, 10902059]
  2. Tsinghua University Initiative Scientific Research Program [2011Z02173]
  3. Foundation for the Author of National Excellent Doctoral Dissertation of China (FANEDD) [2007B30]
  4. Fundamental Research Funds for the Central Universities
  5. Key Lab of Engineering Disaster Prevention and Structural Safety of China Ministry of Education

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Stresses in the oxide film/metal substrate system are crucial to the reliability of the system at high temperature. Two models for predicting the stress evolution during isothermal oxidation are proposed. The deformation of the system is depicted by the curvature for single surface oxidation. The creep strain of the oxide and metal, and the lateral growth strain of the oxide are considered. The proposed models are compared with the experimental results in literature, which demonstrates that the elastic model only considering for elastic strain gives an overestimated stress in magnitude, but the creep model is consistent with the experimental data and captures the stress relaxation phenomenon during oxidation. The effects of the parameter for the lateral growth strain rate are also analyzed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4736934]

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