Current density-voltage analyses and interface characterization in Ag/DNA/p-InP structures

The current density-voltage (J-V) characteristics of Ag/DNA/p-InP metal-insulator-semiconductor (MIS) structures have been investigated in room temperature. We have observed that the Ag/DNA/p-InP structure shows an excellent rectifying behavior and that this structure increases the barrier height (Phi(b0)). The main electrical parameters of these structures, such as ideality factor (n), barrier height, and average series resistance values were found to be 1.087, 0.726 eV, and 66.92 Omega. This value of n was attributed to the presence of an interfacial insulator layer at the Ag/p-InP interface and the density of interface states (N-ss) localized at the InP/DNA interface. The values of N-ss localized at the InP/DNA interface were found at 0.675-E-v in the 1.38 x 10(12) eV(-1) cm(-2). (C) 2012 American Institute of Physics. [doi:10.1063/1.3684989]