期刊
JOURNAL OF APPLIED PHYSICS
卷 111, 期 9, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4712030
关键词
-
资金
- Natural Science Foundation of China [10802101]
With this work, we demonstrate a three-stage degradation behavior of GaN based LED chips under current/thermal co-stressing. The three stages in sequence are the initial improvement stage, the platform stage, and the rapid degradation stage, indicating that current/thermal co-stressing activates positive effects and negative ones simultaneously, and the dominant degradation mechanisms evolve with aging time. Degradation mechanisms are discussed. Electric current stress has dual characters: damaging the active layers by generating defects and at the same time improving the p-type conductivity by activating the Mg-dopant. High temperature stresses will promote the effects from electric current stresses. The activation of the Mg-dopant will saturate, whereas the generation of defects is carried on in a progressive way. Other mechanisms, such as deterioration of ohmic contacts, also operate. These mechanisms compete/cooperate with each other and evolve with aging time, resulting in the observed three-stage degradation behavior. There exist risks to predict the lifetime of LEDs by a model with a constant accelerated factor. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712030]
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