The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Positive ion emission

We examine UV laser-induced ion emission from a wide bandgap semiconductor, single-crystal ZnO, at fluences well below both the damage threshold and plasma formation. At fluences below 200 mJ/cm(2), we observe only Zn+, and the Zn+ intensity decreases monotonically during exposure. At higher fluences, after an initial decrease, the emission is sustained; in addition O+ and O-2(+) are observed. We explain: how Zn ions of several eV in energy can be produced on the surface of a semiconductor, how sustained emission can be maintained, and the origin of an anomalous emission of slow Zn+ ions - the latter is shown to arise from photoionization of atomic Zn, also emitted by this radiation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691939]