期刊
JOURNAL OF APPLIED PHYSICS
卷 112, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4732138
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资金
- U.S. NSF under I/UCRC CONNECTION ONE
- NSF I-Corp
- NSF EAGER
- NPRP [NPRP 09-1211-2-475]
- Directorate For Engineering
- Div Of Industrial Innovation & Partnersh [1157515] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1106444] Funding Source: National Science Foundation
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1134723] Funding Source: National Science Foundation
Recent work on plasmonic terahertz detection using field effect transistors (FETs) has yielded detectors with high responsivity. Therefore, deviation from small signal mode of operation, when the detector signal is simply proportional to the THz intensity, must be considered. This work presents a new analytical model to predict terahertz response in a FET at arbitrary intensity levels. The proposed analytical model was experimentally validated using a 0.13 mu m InGaAs high electron mobility transistor and optically pumped CO2 gas laser operating at 1.63 THz of varying output intensities. The model is suitable for implementation in circuit simulators and might be used for device optimization and THz circuit design. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732138]
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