期刊
JOURNAL OF APPLIED PHYSICS
卷 111, 期 5, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3692769
关键词
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资金
- National Basic Research Program of China [2012CB921403]
- National Natural Science Foundation of China [10825418, 11134012]
We investigate the effect of various ferroelectric parameters, such as the doping density, the permittivity, and the thickness, on ferroelectric diodes based on the proposed self-consistent numerical model. Our calculations clarify the dependence of the band diagrams, the charge density distributions, and the I-V curves on these important ferroelectric parameters in metal/ferroelectrics/metal structures. The calculated results reveal that the ON/OFF ratio of the ferroelectric diodes decreases with the increase of the doping density, the permittivity, and the thickness in the ferroelectric film, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3692769]
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