期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3603029
关键词
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资金
- Ontario Centres of Excellence
- Natural Sciences and Engineering Research Council of Canada
The continuity and Poisson equations are solved numerically to obtain J-V characteristics and photoconversion efficiency of a two-junction solar cell. The cell consists of a top junction comprised of nanowires with bandgap of 1.7 eV grown on a bottom junction comprised of a Si substrate. The lattice relaxation possible in nanowires permits lattice-mismatched III-V material growth on Si, thereby achieving the optimum bandgaps in a two-junction cell. The model indicates a limiting efficiency of 42.3% under a concentration of 500 Suns (AM1.5 D spectrum). This limiting efficiency is similar to that calculated for the planar lattice-matched triple-junction Ge/InGaAs/InGaP cell. Methods of fabricating the nanowire/Si cell are discussed including requirements for nanowire sidewall surface passivation. The model indicated that passivation of the nanowire sidewall surfaces that produces a surface recombination velocity of 3000 cm.s(-1) and surface trap density of 10(12) cm(-2) should be sufficient to yield high efficiency solar cells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603029]
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