期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 1, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3524183
关键词
-
资金
- Spanish Ministry of Science and Innovation
- DAAD [314-Al-e-dr, HA2006-0025]
Distinguishing the scattering contributions of isoelectronic atomic species by means of conventional x-ray- and/or electron diffraction techniques is a difficult task. Such a problem occurs when determining the crystal structure of compounds containing different types of atoms with equal number of electrons. We propose a new structural model of Cu(InxGa1-x)(3)Se-5 which is valid for the entire compositional range of the CuIn3Se5-CuGa3Se5 solid solution. Our model is based on neutron and anomalous x-ray diffraction experiments. These complementary techniques allow the separation of scattering contributions of the isoelectronic species Cu+ and Ga3+, contributing nearly identically in monoenergetic x-ray diffraction experiments. We have found that CuIII3Se5 (III = In, Ga) in its room temperature near-equilibrium modification exhibits a modified stannite structure (space group I (4) over bar 2m). Different occupation factors of the species involved, Cu+, In3+, Ga3+, and vacancies have been found at three different cationic positions of the structure (Wyckoff sites 2a, 2b, and 4d) depending on the composition of the compound. Significantly, Cu+ does not occupy the 2b site for the In-free compound, but does for the In-containing case. Structural parameters, including lattice constants, tetragonal distortions, and occupation factors are given for samples covering the entire range of the CuIn3Se5-CuGa3Se5 solid solution. At the light of the result, the denotation of Cu-poor 1:3:5 compounds as chalcopyrite-related materials is only valid in reference to their composition. (C) 2011 American Institute of Physics. [doi:10.1063/1.3524183]
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