期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3553880
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资金
- National Science Foundation [0907260, 0701421]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1028490] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0907260] Funding Source: National Science Foundation
Thermoelectric properties of AlInN alloys, grown by metalorganic vapor phase epitaxy (MOVPE), with In-contents (x) from 11% up to 21.34% were characterized and analyzed at room temperature. The thermoelectric figure of merit (Z*T) values of the n-Al1-xInxN alloys were measured as high as 0.391 up to 0.532 at T = 300 K. The use of high In-content (x = 21.34%) AlInN alloys leads to significant reduction in thermal conductivity [kappa = 1.62 W/(mK)] due to the increased alloy scattering, however, the optimized thermoelectric material was obtained for AlInN alloy with In-content of 17% attributed to its large power factor. (C) 2011 American Institute of Physics. [doi:10.1063/1.3553880]
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