4.6 Article

Room temperature ferromagnetism in HfO2 films

期刊

JOURNAL OF APPLIED PHYSICS
卷 109, 期 7, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.3559490

关键词

-

向作者/读者索取更多资源

HfO2 films were produced by sputter deposition in the substrate temperature (T-s) range of room temperature (RT)-300 degrees C and their structural, magnetic, and electrical properties were evaluated. The results indicate that the HfO2 films crystallize in the monoclinic structure and are oriented along the (-111) direction. Magnetization measurements (300-1.8 K) evidence their RT ferromagnetism. The effect of T-s is significant on the magnetic moment (M) and coercivity (H-c). M and H-c values enhanced with increasing T-s due to formation of oxygen vacancies. Increase in the temperature from 150 to 300 K decreases H-c without any transition, indicating that the Curie temperature of HfO2 films is higher than RT. Electrical measurements indicate that the HfO2 films are semiconducting. VC 2011 American Institute of Physics. [doi:10.1063/1.3559490]

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据