4.6 Article

Modifications in structural and electronic properties of TiO2 thin films using swift heavy ion irradiation

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JOURNAL OF APPLIED PHYSICS
卷 110, 期 8, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3657466

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  1. Inter-University Accelerator Centre (IUAC), New Delhi, India
  2. European Synchrotron Radiation Facility, Grenoble Cedex, France
  3. Korea Institute of Science and Technology, Seoul, Republic of Korea [KIST-2V01680]
  4. Department of Science and Technology (DST), Government of India [S2/SR/CMP-0051/2007]

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We report on the structural and electronic properties of swift heavy ion (SHI) irradiated pristine TiO2 thin films, deposited by radio frequency magnetron sputtering on sapphire substrates. The high resolution x-ray diffraction and Raman measurements show a structural phase transition from anatase to admixture of brookite and rutile phases of TiO2 with increasing SHI fluence followed by a significant distortion in the TiO6 octahedra. The modification in the electronic structure stimulated by SHI irradiation has been investigated using x-ray absorption (XAS) experiments at the O K and Ti L-3,L-2 absorption edges. The O K edge spectra clearly indicate the splitting of the pre-edge spectral features having t(2g) and e(g) symmetry bands due to structural disorder/distortion induced by irradiation. The intensity of the SHI generated components at the O K edge increases monotonically, which can be correlated to the modification in unoccupancies associated with O 2 p orbitals hybridized with Ti 3 d states. The XAS spectra at the Ti L-3,L-2 edge further authenticate that SHI creates a controlled structural disorder/distortion in the TiO6 octahedra. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657466]

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