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D. Donoval et al.
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Z. -Q. Fang et al.
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JOURNAL OF APPLIED PHYSICS (2009)
Effects of thermal annealing on the electrical and structural properties of Pt/Mo Schottky contacts on n-type GaN
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Temperature variation of current-voltage characteristics of Au/Ni/n-GaN Schottky diodes
S. Dogan et al.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES (2009)
Thermionic field emission in Pt-Al0.45Ga0.55N Schottky photodiode
C. J. Cheng et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2009)
Free-standing gallium nitride Schottky diode characteristics and stability in a high-temperature environment
Donagh O'Mahony et al.
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Analysis of the current-voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range
M. Ravinandan et al.
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Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures
Engin Arslan et al.
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Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes
Yu-Lin Wang et al.
SENSORS AND ACTUATORS B-CHEMICAL (2009)
Band gap bowing parameter of In1-xAlxN
R. E. Jones et al.
JOURNAL OF APPLIED PHYSICS (2008)
GaN-Based RF power devices and amplifiers
Umesh K. Mishra et al.
PROCEEDINGS OF THE IEEE (2008)
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
A. E. Belyaev et al.
SEMICONDUCTORS (2008)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
R. Butte et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2007)
InAIN/GaN HEMTs:: A first insight into technological optimization
J Kuzmík et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecular-beam epitaxy -: art. no. 023703
H Zhang et al.
JOURNAL OF APPLIED PHYSICS (2006)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
The dislocation origin and model of excess tunnel current in GaP p-n structures
VV Evstropov et al.
SEMICONDUCTORS (2000)