期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3574405
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资金
- EPSRC-UK [EP/E027261/1]
- Fund for Fundamental Research of the Republic of Belarus [F09K-023]
- EPSRC [EP/E027261/1, EP/H019987/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E027261/1, EP/H019987/1] Funding Source: researchfish
Electrically active defects introduced into Ge crystals co-doped with tin and phosphorus atoms by irradiation with 6 MeV electrons have been studied by means of transient capacitance techniques and ab-initio density functional modeling. It is shown that Sn atoms are effective traps for vacancies (V) in the irradiated Ge:Sn+P crystals. The electronic structure of Sn-V is unraveled on the basis of hybrid states from a Sn atom and a divacancy. Unlike the case for Si, Sn-V in Ge is not a donor. A hole trap with 0.19 eV activation energy for hole emission to the valence band is assigned to an acceptor level of the Sn-V complex. The Sn-V complex anneals out upon heat-treatments in the temperature range 50-100 degrees C. Its disappearance is accompanied by the formation of phosphorus-vacancy centers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3574405]
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