期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3651612
关键词
-
资金
- Army Research Office [W911-NF-09-1-0398]
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron correlation induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO(3) are used to assess the potential of the modulation-doped Mott FET (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique charge gain characteristics as well as competitive transconductance, small signal gain, and current drive. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651612]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据