期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 6, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3639287
关键词
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资金
- National Key Basic Research Program of China (973) [2009CB930600]
- National Natural Science Foundation of China [60876010, 20774043, 20974046, 10874063, 61006007]
- Ministry of Education of China [208050]
- NJUPT [NY210030]
- Key Project of Science and Technology of Shandong Province of China [2010GGX10127]
- National Science Foundation for Post-doctoral Scientists of China [20100471354]
We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 x 10(4). The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3639287]
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