Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

Threading dislocations that are of a type were observed to form locally in InGaN layers and wells containing 7%-15% indium. Direct correlations between a type dislocations and stacking faults in InGaN layers and wells were observed. The formation of these dislocations is attributed to the dissociation of Shockley partials bounding the stacking faults. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643001]