相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Formation of edge misfit dislocations in GexSi1-x(x∼0.4-0.8) films grown on misoriented (001)→(111) Si substrates: Features before and after film annealing
Yu. B. Bolkhovityanov et al.
JOURNAL OF APPLIED PHYSICS (2010)
Specific features of formation and propagation of 60° and 90° misfit dislocations in GexS1-x/Si films with x > 0.4
Yu. B. Bolkhovityanov et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Electroluminescence from Ge on Si substrate at room temperature
Weixuan Hu et al.
APPLIED PHYSICS LETTERS (2009)
Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si (x∼0.4-0.5) films caused by Si substrate misorientation from (001)
Yu. B. Bolkhovityanov et al.
APPLIED PHYSICS LETTERS (2008)
Formation of edge misfit dislocations in GeχSi1-χ (χ∼0.4-0.5) films grown on misoriented (001) → (111) Si substrates
Yu. B. Bolkhovityanov et al.
JOURNAL OF CRYSTAL GROWTH (2008)
The influence of low-temperature Ge seed layer on growth of high-quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
Zhiwen Zhou et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition
Yu. B. Bolkhovityanov et al.
SEMICONDUCTORS (2008)
Plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy in the presence of the Sb surfactant
Yu. B. Bolkhovityanov et al.
SEMICONDUCTORS (2007)
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu et al.
OPTICS EXPRESS (2007)
Very thin, high Ge content Si0.3Ge0.7 relaxed buffer grown by MBE on SOI(001) substrate
M. Myronov et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
T. H. Loh et al.
APPLIED PHYSICS LETTERS (2007)
Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)
TF Wietler et al.
THIN SOLID FILMS (2006)
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang et al.
APPLIED PHYSICS LETTERS (2006)
Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities
TF Wietler et al.
APPLIED PHYSICS LETTERS (2005)
Energy resolved spin-polarised electron photoemission from strained GaAs/GaAsP heterostructure
YA Mamaev et al.
SOLID STATE COMMUNICATIONS (2000)