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TA Lafford et al.
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Discrimination of local radiative and nonradiative recombination processes in an InGaN/GaN single-quantum-well structure by a time-resolved multimode scanning near-field optical microscopy
A Kaneta et al.
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CH Chen et al.
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R Chierchia et al.
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M Yamada et al.
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J Bläsing et al.
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Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells
T Kuroda et al.
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J Han et al.
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A Ishibashi et al.
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X-ray diffraction analysis of the defect structure in epitaxial GaN
H Heinke et al.
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N Sharma et al.
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