期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3562214
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资金
- Korean Ministry of Education, Science and Technology [M10600000198-06J0000-19810]
- KRCF
Spin transport in a magnetic tunnel junction with a synthetic antiferromagnetic (SAF) free layer is investigated using the drift-diffusion model. Although the diffusive transport is inappropriate for the MgO tunnel barrier, the drift-diffusion model is found to capture the core features of in-plane spin-transfer torque (STT) through the tunnel barrier, and more importantly, it can describe non-negligible STT exerting on two ferromagnets in a SAF-free layer. STT in a SAF-free layer substantially changes the magnetization dynamics and induces a shift of the critical switching current. STT in a SAF-free layer suppresses current-induced parallel-to-antiparallel switching, whereas it encourages antiparallel-to-parallel switching. (C) 2011 American Institute of Physics. [doi:10.1063/1.3562214]
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