期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3532041
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资金
- EPSRC [EP/F069359/1, EP/G032300/1]
- EPSRC [EP/F069359/1, EP/G032300/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/F069359/1, EP/G032300/1] Funding Source: researchfish
Artificial multiferroic systems, which combine piezoelectric and piezomagnetic materials, offer novel methods of controlling material properties. Here, we use combined structural and magnetic finite element models to show how localized strains in a piezoelectric film coupled to a piezomagnetic nanowire can attract and pin magnetic domain walls. Synchronous switching of addressable contacts enables the controlled movement of pinning sites, and hence domain walls, in the nanowire without applied magnetic field or spin-polarized current, irrespective of domain wall structure. Conversely, domain wall-induced strain in the piezomagnetic material induces a local potential difference in the piezoelectric, providing a mechanism for sensing domain walls. This approach overcomes the problems in magnetic nanowire memories of domain wall structure-dependent behavior and high power consumption. Nonvolatile random access or shift register memories based on these effects can achieve storage densities >1 Gbit/In(2), sub-10 ns switching times, and power consumption <100 keV per operation. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3532041]
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