期刊
JOURNAL OF APPLIED PHYSICS
卷 110, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3624910
关键词
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资金
- Agency of Science, Technology and Research (A*STAR), Singapore
- SERC [092-156-0118]
- Ministry of Education, Singapore [T11-1001-P04]
- Seagate Technology
The effects of a TiN intermediate layer on the epitaxial growth and magnetic properties of FePt films were investigated. It was found that 5 nm TiN can effectively block the diffusion of a CrRu underlayer into a FePt magnetic layer and the magnetic dead layer on the TiN layer was negligible. Compared with an FePt film grown on a MgO intermediate layer, FePt film grown on a TiN interlayer exhibited very high out-of-plane coercivity and very narrow opening-up of in-plane hysteresis loop. With doping 40 vol. % SiNx in FePt film the grain size was reduced to 5.5 nm and the magnetic properties, such as high out-of-plane coercivity and line-like in-plane hysteresis loop, were retained. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624910]
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