Effective mobility of single-layer graphene transistors as a function of channel dimensions

A detailed analysis of the extracted back gated FET mobility as a function of channel length, channel width, and underlying oxide thickness for both exfoliated and chemical vapor deposited (CVD) graphene is presented. The mobility increases with increasing channel length eventually saturating at a constant value for channel lengths of several micrometers. The length dependence is consistent with the transition from a ballistic to diffusive transport regime. The mobility as a function of channel width first increases and then decreases. The increase in mobility for very small channel widths is consistent with a reduction in edge scattering. The decrease in mobility for larger channel widths is observed to be strongly dependent on the oxide thickness suggesting that electrostatics associated with fringing fields is an important effect. This effect is further confirmed by a comparative analysis of the measured mobility of graphene devices with similar channel dimensions on oxides of different thicknesses. The observed electrical measurements are in excellent agreement with theoretical studies predicting the width dependence of conductivity and mobility. The mobility of CVD grown graphene is slightly lower than that of exfoliated graphene but shows similar trends with length and width. The mobility values reported in the literature are in agreement with the trend reported here. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592338]