相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Nanocrystalline diamond as an electronic material: An impedance spectroscopic and Hall effect measurement study
Mose Bevilacqua et al.
JOURNAL OF APPLIED PHYSICS (2010)
Evolution of Electrical, Chemical, and Structural Properties of Transparent and Conducting Chemically Derived Graphene Thin Films
Cecilia Mattevi et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Structural and electrical characteristics of nitrogen-doped nanocrystalline diamond films prepared by CVD
Qiang Hu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2009)
Electron mobility in phosphorous doped {111} homoepitaxial diamond
J. Pernot et al.
APPLIED PHYSICS LETTERS (2008)
Multiwavelength Raman spectroscopy of diamond nanowires present in n-type ultrananocrystalline films
R. Arenal et al.
PHYSICAL REVIEW B (2007)
Raman and conductivity studies of boron doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond films
P. W. May et al.
CHEMICAL PHYSICS LETTERS (2007)
The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings
C. Saguy et al.
DIAMOND AND RELATED MATERIALS (2007)
Conductive and resistive nanocrystalline diamond films studied by Raman spectroscopy
K. Teii et al.
DIAMOND AND RELATED MATERIALS (2007)
Theoretical study of Li and Na as n-type dopants for diamond
J. P. Goss et al.
PHYSICAL REVIEW B (2007)
Transport properties of n-type ultrananocrystalline diamond films
I. S. Beloborodov et al.
PHYSICAL REVIEW B (2006)
Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates
P. Achatz et al.
PHYSICAL REVIEW B (2006)
Ultrananocrystalline diamond for electronic applications
O. A. Williams
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
Weak localization in ultrananocrystalline diamond
JJ Mares et al.
APPLIED PHYSICS LETTERS (2006)
Raman spectroscopy of hydrogenated amorphous carbons
C Casiraghi et al.
PHYSICAL REVIEW B (2005)
n-type doping of (001)-oriented single-crystalline diamond by phosphorus -: art. no. 222111
H Kato et al.
APPLIED PHYSICS LETTERS (2005)
Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes
M Suzuki et al.
APPLIED PHYSICS LETTERS (2004)
Bonding structure in nitrogen doped ultrananocrystalline diamond
J Birrell et al.
JOURNAL OF APPLIED PHYSICS (2003)
Tight-binding molecular-dynamics simulation of impurities in ultrananocrystalline diamond grain boundaries
P Zapol et al.
PHYSICAL REVIEW B (2002)
Surface morphology and electrical properties of boron-doped diamond films synthesized by microwave-assisted chemical vapor deposition using trimethylboron on diamond (100) substrate
T Tsubota et al.
DIAMOND AND RELATED MATERIALS (2000)
Interpretation of Raman spectra of disordered and amorphous carbon
AC Ferrari et al.
PHYSICAL REVIEW B (2000)
n-type semiconducting diamond by means of oxygen-ion implantation
JF Prins
PHYSICAL REVIEW B (2000)
Evolution of sp2 bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy
M Chhowalla et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
