4.6 Article Proceedings Paper

Interfaces in organic devices studied with resonant soft x-ray reflectivity

期刊

JOURNAL OF APPLIED PHYSICS
卷 110, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3661991

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资金

  1. U.S. Department of Energy [DE-FG02-98ER45737]
  2. Materials Research Laboratory
  3. National Science Foundation [DMR-1121053]
  4. NSF [0547639]
  5. Department of Energy, Office of Basic Energy Sciences [DE-SC000-2368]
  6. Engineering and Physical Sciences Research Council, U.K. [EP/E051804/1]
  7. Office of Science, Department of Energy [DE-AC02-05CH11231]
  8. EPSRC [EP/E051804/1] Funding Source: UKRI
  9. Engineering and Physical Sciences Research Council [EP/E051804/1] Funding Source: researchfish
  10. Direct For Mathematical & Physical Scien [0547639] Funding Source: National Science Foundation
  11. Division Of Materials Research [0547639] Funding Source: National Science Foundation

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Interfaces between donor and acceptor semiconducting polymers are critical to the performance of polymer light-emitting diodes and organic solar cells. Similarly, interfaces between a conjugated polymer and a dielectric play a critical role in organic thin-film transistors. Often, these interfaces are difficult to characterize with conventional methods. Resonant soft x-ray reflectivity (R-SoXR) is a unique and relatively simple method to investigate such interfaces. R-SoXR capabilities are exemplified by presenting or discussing results from systems spanning all three device categories. We also demonstrate that the interfacial widths between active layers can be controlled by annealing at elevated temperature, pre-annealing of the bottom layer, or casting from different solvent mixtures. The extension of R-SoXR to the fluorine K absorption edge near 698 eV is also demonstrated. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3661991]

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