期刊
JOURNAL OF APPLIED PHYSICS
卷 109, 期 7, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3535326
关键词
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资金
- Ministry of Education, Culture, Sports, Science and Technology of Japan [2042011]
We investigated the effect of thin GaOx insertion layers on the Schottky barrier height phi(B) for Fe/n-GaAs junctions. The value of phi(B) showed a remarkable decrease from 0.84 down to 0.56 eV with increasing GaOx thickness up to 2.0 nm. Large suppression of phi(B) is of greater advantage than using other oxide materials for achieving low contact resistance of the emitter/detector electrodes, which is the key to developing high-performance GaAs-based spintronics devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3535326]
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